Micron Technology DRAM SDRAM-DDR3L, Part #: MT52L512M32D2PU-107 WT:B | Dynamic random access memory | DEX Wind Power Xilinx Field Programmable Gate Array

Xilinx Field Programmable Gate Array Part #XC7VX690T-2FFG1158I

NXP:S912ZVCA19F0MLFR

AOD:4G0-035-080-C

3VOUT from 12VIN

Micron Technology DRAM SDRAM-DDR3L, Part #: MT52L512M32D2PU-107 WT:B | Dynamic random access memory | DEX Wind Power Xilinx Field Programmable Gate ArrayMicron Technology DRAM , Part #: MT52L512M32D2PU 107 WT: B features: VDD = VDDQ = 1. 5V 0. 075V 1. 5V center terminated push pull I O Differential bidirectional data strobe 8n bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on die termination (ODT) for data, strobe, and mask signals Programmable CAS READ latency (CL) Posted CAS additive latency (AL) Programmable CAS WRITE latency (CWL) based on t CK